bss84 document number: ds30149 rev. 2 2 - 2 1 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 p - channel enhancement mode mosfet product summary bv dss r ds( on ) max i d t a = + 25 c - 50 v 1 0 ? @ v gs = - 5 v - 130ma description this mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: sot23 ? case material: ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish (lead free plating) solderable per mil - std - 202, method 208 ? terminal conne ctions: see diagram ? weight: 0.00 9 grams ( a pproximate) ordering information (note 5 ) part number qualification case packaging bss84 - 7 - f commercial sot23 3000/tape & reel bss84 q - 7 - f automotive sot23 3000/tape & reel bss84 - 13 - f commercial sot23 100 00/tape & reel bss84 q - 13 - f automotive sot23 100 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free " green " products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer t o http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 1998 ~ 2016 2017 2018 201 9 20 20 20 21 20 22 2023 code j ~ d e f g h i j k month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view equivalent circuit top view k84 = product type marking code ym or ym = date code marking y or y = year (ex: e = 20 1 7 ) m = month (ex: 9 = september) d s g d g s e3
bss84 document number: ds30149 rev. 2 2 - 2 2 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 50 v drain - gate voltage r gs ? ? dgr - 50 v gate - source voltage continuous v gss 20 v drain current (note 6 ) continuous i d - 130 ma pulsed drain current i dm - 1.2 a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) p d 300 mw thermal resistance, junction to ambient r ? ja 417 ? j , t stg - 55 to +150 ? electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 50 ? ? gs = 0v, i d = - 250a zero gate voltage drain current i dss ? ? ? ? ? ? ? na v ds = - 50v, v gs = 0v, t j = + 25 c v ds = - 50v, v gs = 0v, t j = + 125 c v ds = - 25v, v gs = 0v, t j = + 25 c gate - body leakage i gss ? ? gs = 20v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 0.8 ? ds = v gs , i d = - 1ma static drain - source on - resistance r ds (on) ? ? ? gs = - 5v, i d = - 0.100a forward transconductance g fs 0.05 ? ? ds = - 25v, i d = - 0.1a dynamic characteristics (note 8 ) input capacitance c iss ? ds = - 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? rss ? g ? ? ? ? ds = 0v, v gs = 0v, f = 1mhz total gate charge ( v gs = - 4.5v ) q g ? ? ? ds = - 10 v, i d = - 0. 1 a total gate charge ( v gs = - 10 v ) q g ? ? ? gs ? ? ? gd ? ? ? d(on) ? ? dd = - 30v, i d = - 0.27a, r gen = 50 ? gs = - 10v turn - off delay time t d(off) ? ? notes: 6 . device mounted on fr - 4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in diodes inc orporated s package outline pdfs, which can be found on our website at http://www.diodes.com/package - outlines.html . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing .
bss84 document number: ds30149 rev. 2 2 - 2 3 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 ( c ) ( c ) 0 50 100 25 50 75 100 125 150 175 200 p , p o w e r d i s s i p a t i o n ( m w ) d t , ambient temperature ( C ) fig. 1 max power dissipation vs. ambient temperature a 150 200 250 300 350 0 400 0 -600 -500 -400 -300 -200 -100 0 -2 -1 -5 -4 -3 i , d r a i n - s o u r c e c u r r e n t ( m a ) d v , drain-source voltage (v) fig. 2 drain-source current vs. drain-source voltage ds 0.0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -2 -3 -4 -1 -8 -7 -6 -5 i , d r a i n - c u r r e n t ( a ) d v , gate-source voltage (v) fig. 3 drain-current vs. gate-source voltage gs 0 1 2 4 5 3 6 8 7 10 9 0 -1 -2 -3 -4 -5 v , gate-source (v) fig. 4 on-resistance vs. gate-source voltage gs t = 25 c a t = 125 c a r , n o r m a l i z e d d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 3 6 9 12 15 -50 -25 0 25 50 125 100 75 150 t , junction temperature ( C ) fig. 5 on-resistance vs. junction temperature j v = -10v i = -0.13a gs d r , o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.0 5.0 10.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 i , drain-current (a) fig. 6 on-resistance vs. drain-current d 15.0 20.0 25.0 r , o n - r e s i s t a n c e ( ) d s ( o n ) ?
bss84 document number: ds30149 rev. 2 2 - 2 4 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 1 10 100 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) fig. 7 typical junction capacitance f = 1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 v gs (v) q g (nc) fig. 8 gate charge v ds = - 10v, i d = - 0.1a 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) fig. 9 soa, safe operation area t j (max) = 150 c = 25 gs = - 10 v r ds(on) limited dc p w = 10s p w = 1s p w = 100ms p w = 10ms p w = 1ms p w = 100 s
bss84 document number: ds30149 rev. 2 2 - 2 5 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot23 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot23 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 0 8 -- all dimensions in mm dimensions value (in mm) c 2.0 x 0.8 x1 1.35 y 0.9 y1 2.9 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x y y1 c x1
bss84 document number: ds30149 rev. 2 2 - 2 6 of 6 www.diodes.com may 2017 ? diodes incorporated bss84 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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